Generation of millimeter waves in epitaxial lift-off HEMTs to 94 GHz

Author

Bhattacharya, D. ; Ali, M.E. ; Fetterman, H.R. ; Streit, D.

Author_Institution

Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA

Volume

2

fYear

1996

fDate

18-21 Nov 1996

Firstpage

326

Abstract

Epitaxial Lift-off (ELO) has become an increasingly important tool to integrate devices of dissimilar material systems. We explore the use of optically driven ELO InP HEMTs to generate millimeter wave radiation up to 94 GHz. Our results demonstrate the viability of using ELO techniques for integration of millimeter wave HEMT photodetectors in novel new optoelectronic systems

Keywords

III-V semiconductors; S-parameters; frequency response; high electron mobility transistors; indium compounds; integrated optoelectronics; millimetre wave field effect transistors; millimetre wave generation; semiconductor epitaxial layers; 94 GHz; InP; InP substrate; S-parameters; electrical response; epitaxial lift-off HEMTs; millimeter wave HEMT photodetector integration; millimeter wave generation; optical frequency response; optically driven ELO HEMTs; optoelectronic systems; Frequency; HEMTs; Indium phosphide; MODFETs; Millimeter wave technology; Optical devices; Optical films; Optical mixing; Optical receivers; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.571837

Filename

571837