DocumentCode :
25874
Title :
Effect of Environmental Humidity on Dielectric Charging Effect in RF MEMS Capacitive Switches Based on C
Author :
Wang, Lingfeng ; Tang, Jie-Ying ; Huang, Qing-An
Author_Institution :
Key Laboratory of MEMS of the Ministry of Education, Southeast University , Nanjing, China
Volume :
22
Issue :
3
fYear :
2013
fDate :
Jun-13
Firstpage :
637
Lastpage :
645
Abstract :
A capacitance–voltage ( C V ) model is developed for RF microelectromechanical systems (MEMS) switches at upstate and downstate. The transient capacitance response of the RF MEMS switches at different switch states was measured for different humidity levels. By using the C V model as well as the voltage shift dependent of trapped charges, the transient trapped charges at different switch states and humidity levels are obtained. Charging models at different switch states are explored in detail. It is shown that the injected charges increase linearly with humidity levels and the internal polarization increases with increasing humidity at downstate. The speed of charge injection at 80 % relative humidity (RH) is about ten times faster than that at 20 % RH. A measurement of pull-in voltage shifts by C V sweep cycles at 20 % and 80 % RH gives a reasonable evidence. The present model is useful to understand the pull-in voltage shift of the RF MEMS switch. \\hfill [2012-0144]
Keywords :
Bridge circuits; Capacitance; Dielectrics; Humidity; Metals; Radio frequency; Stress; $hbox{Si}_{3}hbox{N}_{4}$ film; Capacitance characterization; RF microelectromechanical systems (MEMS) capacitive switch; dielectric charging; humidity;
fLanguage :
English
Journal_Title :
Microelectromechanical Systems, Journal of
Publisher :
ieee
ISSN :
1057-7157
Type :
jour
DOI :
10.1109/JMEMS.2012.2237384
Filename :
6419742
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