DocumentCode
25874
Title
Effect of Environmental Humidity on Dielectric Charging Effect in RF MEMS Capacitive Switches Based on
– 

Author
Wang, Lingfeng ; Tang, Jie-Ying ; Huang, Qing-An
Author_Institution
Key Laboratory of MEMS of the Ministry of Education, Southeast University , Nanjing, China
Volume
22
Issue
3
fYear
2013
fDate
Jun-13
Firstpage
637
Lastpage
645
Abstract
A capacitance–voltage (
–
) model is developed for RF microelectromechanical systems (MEMS) switches at upstate and downstate. The transient capacitance response of the RF MEMS switches at different switch states was measured for different humidity levels. By using the
–
model as well as the voltage shift dependent of trapped charges, the transient trapped charges at different switch states and humidity levels are obtained. Charging models at different switch states are explored in detail. It is shown that the injected charges increase linearly with humidity levels and the internal polarization increases with increasing humidity at downstate. The speed of charge injection at 80
relative humidity (RH) is about ten times faster than that at 20
RH. A measurement of pull-in voltage shifts by
–
sweep cycles at 20
and 80
RH gives a reasonable evidence. The present model is useful to understand the pull-in voltage shift of the RF MEMS switch.
[2012-0144]
Keywords
Bridge circuits; Capacitance; Dielectrics; Humidity; Metals; Radio frequency; Stress; $hbox{Si}_{3}hbox{N}_{4}$ film; Capacitance characterization; RF microelectromechanical systems (MEMS) capacitive switch; dielectric charging; humidity;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2012.2237384
Filename
6419742
Link To Document