Title :
Highly linear 4.9-5.9 GHz WLAN front-end module based on SiGe BiCMOS and SOI
Author :
Huang, Chun-Wen Paul ; Nisbet, John ; Lam, Lui Ray ; Doherty, Mark ; Quaglietta, Anthony ; Vaillancourt, William
Author_Institution :
SiGe Semicond., Andover, MA, USA
Abstract :
A high linearity 4.9-5.9 GHz T/R FEM is presented. The FEM consists of a SiGe BiCMOS PA and a single-pole double-throw SOI switched LNA in a 3 × 3 × 0.6 mm QFN package. The Tx chain has >;31 dB gain and meets 3% EVM up to 22 dBm with harmonic and out-of-band emissions compliant to regulatory limits. The receive chain features 2 dB NF and 14 dB gain with -3 dBm IP1dB for LNA mode and 4.5 dB attenuation in bypass mode with 10 dBm IP1dB. All these features simplify the front-end circuit designs of complex WLAN/MIMO radios.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; MIMO communication; integrated circuit design; low noise amplifiers; network topology; silicon-on-insulator; wireless LAN; BiCMOS; WLAN/MIMO radios; frequency 4.9 GHz to 5.9 GHz; front-end circuit designs; gain 14 dB; highly linear WLAN front-end module; loss 4.5 dB; noise figure 2 dB; single-pole double-throw SOI switched LNA; Finite element methods; Gain; Harmonic analysis; Linearity; Power harmonic filters; Switches; Wireless LAN; WLAN power amplifier; dual-band PA; dual-band front-end module;
Conference_Titel :
Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-61284-754-2
Electronic_ISBN :
0149-645X
DOI :
10.1109/MWSYM.2011.5972932
