DocumentCode
2587440
Title
A 2-18 GHz monolithic phase shifter for electronic warfare phase array applications
Author
Levy, D. ; Noblet, A. ; Bender, Y.W.
Author_Institution
Thomson-CSF/RCM, Malakoff, France
fYear
1988
fDate
6-9 Nov. 1988
Firstpage
265
Lastpage
268
Abstract
The authors described a 2-18-GHz continuously variable phase shifter realized in a GaAs monolithic technology. It comprises in an 8.2*3 mm/sup 2/ area, one distributed amplifier, a four-orthogonal-vector circuit, and three active two-port combiners. Good temperature performance was obtained, with typical variations of 0. 025 dB/ degrees C and 0.3 deg/ degrees C. Features of circuit fabrication and device control are discussed.<>
Keywords
antenna phased arrays; electronic warfare; phase shifters; 2 to 18 GHz; active two-port combiners; circuit fabrication; distributed amplifier; electronic warfare phase array applications; four-orthogonal-vector circuit; monolithic phase shifter; temperature performance; Circuits; Electronic warfare; FETs; Frequency; Gallium arsenide; Insertion loss; Performance loss; Phase shifters; Phased arrays; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location
Nashville, Tennessee, USA
Type
conf
DOI
10.1109/GAAS.1988.11072
Filename
11072
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