Title :
A 2-18 GHz monolithic phase shifter for electronic warfare phase array applications
Author :
Levy, D. ; Noblet, A. ; Bender, Y.W.
Author_Institution :
Thomson-CSF/RCM, Malakoff, France
Abstract :
The authors described a 2-18-GHz continuously variable phase shifter realized in a GaAs monolithic technology. It comprises in an 8.2*3 mm/sup 2/ area, one distributed amplifier, a four-orthogonal-vector circuit, and three active two-port combiners. Good temperature performance was obtained, with typical variations of 0. 025 dB/ degrees C and 0.3 deg/ degrees C. Features of circuit fabrication and device control are discussed.<>
Keywords :
antenna phased arrays; electronic warfare; phase shifters; 2 to 18 GHz; active two-port combiners; circuit fabrication; distributed amplifier; electronic warfare phase array applications; four-orthogonal-vector circuit; monolithic phase shifter; temperature performance; Circuits; Electronic warfare; FETs; Frequency; Gallium arsenide; Insertion loss; Performance loss; Phase shifters; Phased arrays; Temperature;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11072
