Title :
Novel self-assembled ultra-low-k porous silica films with high mechanical strength for 45 nm BEOL technology
Author :
Oku, Y. ; Yamada, K. ; Goto, T. ; Seino, Y. ; Ishikawa, A. ; Ogatal, T. ; Kohmura, K. ; Fujii, N. ; Hata, N. ; Ichikawa, R. ; Yoshino, T. ; Negoro, C. ; Nakano, A. ; Sonoda, Y. ; Takada, S. ; Miyoshi, H. ; Oike, S. ; Tanaka, H. ; Matsuo, H. ; Kinoshita, K
Author_Institution :
MIRAI, Assoc. of Super-Adv. Electron. Technol., Ibaraki, Japan
Abstract :
Novel ultra-low-k porous silica films were developed by use of a self-assembly technology. The mechanical properties of the porous silica films could be reinforced independently of the dielectric constant by introducing a tetramethyl-cyclo-tetra-siloxane (TMCTS) treatment. High modulus porous silica films, with an elastic modulus of 8 GPa and dielectric constant of 2, can be achieved simultaneously. Ultra-low-k/Cu damascene with sufficient mechanical strength was demonstrated for 45 nm BEOL (back-end-of-line) technology.
Keywords :
copper; dielectric thin films; elastic moduli; integrated circuit interconnections; integrated circuit metallisation; mechanical strength; permittivity; porous materials; self-assembly; silicon compounds; 45 nm; BEOL technology; Cu-SiO/sub 2/; TMCTS treatment; back-end-of-line technology; dielectric constant; elastic modulus; mechanical strength; porous silica films; self-assembled silica films; self-assembly; tetramethyl-cyclo-tetra-siloxane; ultra-low-k silica films; ultra-low-k/Cu damascene; Calcination; Dielectric constant; Electronics industry; Industrial electronics; Mechanical factors; Periodic structures; Self-assembly; Semiconductor films; Silicon compounds; Temperature;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269184
