Low-pressure CMP for 300-mm ultra low-k (k=1.6-1.8)/Cu integration

Author

Kondo, S. ; Yoon, B.U. ; Tokitoh, S. ; Misawa, K. ; Sone, S. ; Shin, H.J. ; Ohashi, N. ; Kobayashi, N.

Author_Institution

Semicond. Leading Edge Technol., Inc., Ibaraki, Japan

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Toward the 45 nm technology node, multilevel Cu dual-damascene interconnects with hybrid-structure low-k ILDs (inter-line dielectrics) consisting of porous MSQ (methyl silsesquioxane) (k<1.6-1.8) and organic polymer films are successfully integrated on 300 mm wafers for the first time with a low-pressure CMP and dummy pattern technology, which supports the poor mechanical properties of ultra low-k films.

Keywords

chemical mechanical polishing; copper; dielectric thin films; integrated circuit interconnections; mechanical strength; polymer films; porous materials; 300 mm; 45 nm; Cu; dummy pattern technology; hybrid-structure ILD; inter-line dielectrics; low-pressure CMP; mechanical strength; multilevel Cu dual-damascene interconnects; organic polymer films; porous MSQ; porous methyl silsesquioxane; ultra low-k dielectrics; Chemical technology; Corrosion; Dielectric films; Dielectric materials; Galvanizing; Lead compounds; Mechanical factors; Parasitic capacitance; Polymer films; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269187

Filename

1269187