DocumentCode :
2587551
Title :
A 20 Watt Micro-strip X-Band AlGaN/GaN HPA MMIC for Advanced Radar Applications
Author :
Costrini, C. ; Calori, M. ; Cetronio, A. ; Lanzieri, C. ; Lavanga, S. ; Peroni, M. ; Limiti, E. ; Serino, A. ; Ghione, G. ; Melone, G.
Author_Institution :
SELEX Sist. Integrati S.p.A., Rome
fYear :
2008
fDate :
27-28 Oct. 2008
Firstpage :
566
Lastpage :
569
Abstract :
In this paper a first iteration design, fabrication and test of a two-stage X-Band MMIC HPA in micro-strip AlGaN/GaN technology is reported. With 20 V drain voltage operating bias point, at 3 dB compression point, the HPA delivers a pulsed output power ranging from 21 to 28.5 W, an associated gain from 12.9 to 16.5 dB and an associated PAE from circa 30% to 40%, over the 8-10.5 GHz frequency bandwidth. In the best performance frequency points (8.5 and 9 GHz) the HPA exhibits a saturated output power of 30 W with an associated PAE of 40%.
Keywords :
III-V semiconductors; MMIC; aluminium compounds; gallium compounds; microstrip antennas; radar applications; wide band gap semiconductors; AlGaN-GaN; HPA MMIC; X-band; bandwidth 8 GHz to 10.5 GHz; frequency 8.5 GHz; frequency 9 GHz; gain 12.9 dB to 16.5 dB; iteration design; microstrip technology; power 20 W; power 21 W to 28.5 W; power 30 W; radar applications; Aluminum gallium nitride; Fabrication; Frequency; Gallium nitride; MMICs; Power generation; Pulse compression methods; Radar applications; Testing; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2008. EuMIC 2008. European
Conference_Location :
Amsterdam
Print_ISBN :
978-2-87487-007-1
Type :
conf
DOI :
10.1109/EMICC.2008.4772355
Filename :
4772355
Link To Document :
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