Title :
Demonstration of a SiGe RF LNA design using IBM design kits in 0.18 μm SiGe BiCMOS technology
Author :
Chen, Yiming ; Yuan, Xiaojuen ; Scagnelli, David ; Mecke, James ; Gross, Jeff ; Harame, David
Author_Institution :
IBM Microelectron. Div., San Diego, CA, USA
Abstract :
A 1.5 GHz-2.0 GHz low noise amplifier (LNA) is designed in IBM 0.18 um BiCMOS technology using IBM design kits in cadence design flow. The fabricated LNA chip is packaged and tested. The measured results (gain, noise figure, and IIP3) correlate with the simulation very well. The results demonstrate that IBM SiGe technology, modeling, design kits and the cadence design flow are solid and accurate for RFIC design.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; integrated circuit design; radiofrequency integrated circuits; semiconductor materials; 0.18 μm SiGe BiCMOS technology; 0.18 micron; 1.5 to 2.0 GHz; GeSi; IBM design kits; LNA chip; RFIC design; SiGe RF LNA design; cadence design flow; radiofrequency low noise amplifier; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Low-noise amplifiers; Noise measurement; Packaging; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Testing;
Conference_Titel :
Design, Automation and Test in Europe Conference and Exhibition, 2004. Proceedings
Print_ISBN :
0-7695-2085-5
DOI :
10.1109/DATE.2004.1269193
