Demonstration of a SiGe RF LNA design using IBM design kits in 0.18 μm SiGe BiCMOS technology

Author

Chen, Yiming ; Yuan, Xiaojuen ; Scagnelli, David ; Mecke, James ; Gross, Jeff ; Harame, David

Author_Institution

IBM Microelectron. Div., San Diego, CA, USA

Volume

3

fYear

2004

fDate

16-20 Feb. 2004

Firstpage

22

Abstract

A 1.5 GHz-2.0 GHz low noise amplifier (LNA) is designed in IBM 0.18 um BiCMOS technology using IBM design kits in cadence design flow. The fabricated LNA chip is packaged and tested. The measured results (gain, noise figure, and IIP3) correlate with the simulation very well. The results demonstrate that IBM SiGe technology, modeling, design kits and the cadence design flow are solid and accurate for RFIC design.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; UHF amplifiers; integrated circuit design; radiofrequency integrated circuits; semiconductor materials; 0.18 μm SiGe BiCMOS technology; 0.18 micron; 1.5 to 2.0 GHz; GeSi; IBM design kits; LNA chip; RFIC design; SiGe RF LNA design; cadence design flow; radiofrequency low noise amplifier; BiCMOS integrated circuits; Gain measurement; Germanium silicon alloys; Low-noise amplifiers; Noise measurement; Packaging; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Design, Automation and Test in Europe Conference and Exhibition, 2004. Proceedings

ISSN

1530-1591

Print_ISBN

0-7695-2085-5

Type

conf

DOI

10.1109/DATE.2004.1269193

Filename

1269193