Title :
Monolithic integration of HEMTs and Schottky diodes for millimeter wave circuits
Author :
Ho, W.J. ; Sovero, E.A. ; Deakin, D.S. ; Stein, R.D. ; Sullivan, G.J. ; Higgins, J.A. ; Trinh, T.N. ; August, R.R.
Author_Institution :
Rockwell Int. Sci. Center, Thousand Oaks, CA, USA
Abstract :
The authors report the first monolithic integration of high-quality Schottky diodes (F/sub c/>1250 GHz) and high-performance, low-noise HEMT (high electron mobility transistor) devices (F/sub max/>120 GHz, F/sub min/<2 dB at 18 GHz) and amplifiers (18 dB gain at 20 GHz) on the same wafer. MBE (molecular-beam epitaxy)-grown AlGaAs-GaAs HEMTs show DC transconductance of up to 456 mS/mm for an 0.35 mu m gate length with excellent uniformity. Noise figures of 2 dB, with associated gain of 13 dB at 18 GHz, are uniform over a wide range of device currents at room temperature and decline monotonically to 0.4 dB at 28 K. At room temperature, fabricated two-stage amplifiers show 18-dB gain at 20 GHz. Hybrid microstrip branch line mixers fabricated with the high-frequency diodes demonstrate 7.5-dB loss at 87-96 GHz.<>
Keywords :
MMIC; Schottky-barrier diodes; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; 0.35 micron; 0.4 to 2 dB; 1250 GHz; 13 to 18 dB; 18 to 96 GHz; 456 mS; 7.5 dB; AlGaAs-GaAs; DC transconductance; EHF; HEMTs; MBE; MM-wave circuits; Schottky diodes; gate length; high electron mobility transistor; hybrid type; low-noise; microstrip branch line mixers; millimeter wave circuits; molecular-beam epitaxy; monolithic integration; two-stage amplifiers; Gain; HEMTs; Low-noise amplifiers; MODFETs; Millimeter wave devices; Molecular beam epitaxial growth; Monolithic integrated circuits; Schottky diodes; Temperature distribution; Transconductance;
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1988. Technical Digest 1988., 10th Annual IEEE
Conference_Location :
Nashville, Tennessee, USA
DOI :
10.1109/GAAS.1988.11081
