Experimental and Monte Carlo analysis of drain-avalanche hot-hole injection for reliability optimization in Flash memories

Author

Ielmini, D. ; Ghetti, A. ; Beltrami, S. ; Spinelli, A.S. ; Lacaita, Andrea L. ; Visconti, A.

Author_Institution

Dipt. di Elettronica a Informazione, Politecnico di Milano, Italy

fYear

2003

fDate

8-10 Dec. 2003

Abstract

We present a detailed experimental and numerical analysis of drain avalanche hot-hole injection (DAHHI) in Flash memories. By using carrier-separation techniques, we provide new methods to separately estimate hot-hole impact-ionization and injection into the floating-gate (FG). Monte Carlo (MC) calculations are shown, in good agreement with data, and are used to investigate programming conditions which minimize tunnel-oxide degradation.

Keywords

Monte Carlo methods; circuit optimisation; flash memories; hot carriers; impact ionisation; integrated circuit reliability; DAHHI; Flash memories; Monte Carlo analysis; carrier-separation techniques; drain-avalanche hot-hole injection; floating-gate; hot-hole impact-ionization; memory programming conditions; reliability optimization; tunnel-oxide degradation minimization; Charge carrier processes; Degradation; Electron traps; Flash memory; Hot carriers; Monte Carlo methods; Nonvolatile memory; Tail; Tunneling; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269198

Filename

1269198