Ruggedness of high voltage diodes under very hard Commutation Conditons

Author

Heinze, B. ; Lutz, J. ; Felsl, H.P. ; Schulze, H.-J.

Author_Institution

Chemnitz Univ. of Technol., Chemnitz

fYear

2007

fDate

2-5 Sept. 2007

Firstpage

1

Lastpage

10

Abstract

The possibility for reducing losses in high-voltage IGBT applications is determined by the ruggedness of the associated freewheeling diode (FWD). In this paper the influence of buffer structures and edge termination on the ruggedness of fast recovery diodes in a voltage range of 3.3 kV are analyzed using isothermal and electro-thermal device simulations.

Keywords

commutation; high-voltage techniques; power semiconductor devices; semiconductor diodes; buffer structures; edge termination; electro-thermal device simulations; fast recovery diodes; freewheeling diode; hard commutation conditions; high voltage diodes; high-voltage IGBT applications; isothermal device simulations; power semiconductor device; Analytical models; Cathodes; Chemical technology; Doping; Insulated gate bipolar transistors; Isothermal processes; Semiconductor diodes; Switches; Transient analysis; Voltage; Free-wheeling diode (FWD; Power semiconductor device; Reliability; Robustness; Simulation;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Electronics and Applications, 2007 European Conference on

Conference_Location

Aalborg

Print_ISBN

978-92-75815-10-8

Electronic_ISBN

978-92-75815-10-8

Type

conf

DOI

10.1109/EPE.2007.4417776

Filename

4417776