Title :
Reliability models of data retention and read-disturb in 2-bit nitride storage flash memory cells
Author :
Wang, T. ; Tsai, W.J. ; Gu, S.H. ; Chan, C.T. ; Yeh, C.C. ; Zous, N.K. ; Lu, T.C. ; Pan, S. ; Lu, C.Y.
Author_Institution :
Macronix Int. Co. Ltd., Hsin-Chu, Taiwan
Abstract :
The reliability issues of two-bit storage nitride flash memory cells, including low-V/sub t/ state threshold voltage instability, read-disturb, and high-V/sub t/ state charge loss are addressed. The responsible mechanisms and reliability models are discussed. Our study shows that the cell reliability is strongly dependent on operation methods and process conditions.
Keywords :
flash memories; integrated circuit measurement; integrated circuit modelling; integrated circuit reliability; 2 bit; cell reliability; data retention reliability models; memory read-disturb; nitride storage flash memory cells; state charge loss; threshold voltage instability; Area measurement; Charge measurement; Current measurement; Electronics industry; Flash memory cells; Industrial electronics; Stress; Table lookup; Temperature; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269202
