Title :
Reliability study of CMOS FinFETs
Author :
Yang-Kyu Choi ; Daewon Ha ; Snow, E. ; Bokor, J. ; Tsu-Jae King
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Hot-carrier and oxide reliability of CMOS FinFETs with 2.1 nm-thick gate-SiO/sub 2/ were investigated. It was found that hot-carrier immunity improves as the fin width (body thickness) decreases, which facilitates gate-length scaling, while it is degraded at elevated temperature due to the self-heating effect. High values of Q/sub BD/ are achieved for devices with very small gate area. A post-fin-etch hydrogen anneal is helpful for improving hot-carrier immunity and Q/sub BD/.
Keywords :
CMOS integrated circuits; MOSFET; annealing; hot carriers; semiconductor device reliability; 2.1 nm; CMOS finFET; H/sub 2/; Si-SiO/sub 2/; fin body thickness; fin width; finFET reliability study; gate-length scaling; hot-carrier immunity; oxide reliability; post-fin-etch hydrogen anneal; self-heating effect; Annealing; Charge carrier processes; Electron traps; FinFETs; Hot carriers; Hydrogen; Immune system; MOSFET circuits; Stress; Temperature;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269206
