Title :
RF performance vulnerability to hot carrier stress and consequent breakdown in low power 90 nm RFCMOS
Author :
Pantisano, L. ; Schreurs, D. ; Kaczer, B. ; Jeamsaksiri, W. ; Venegas, R. ; Degraeve, R. ; Cheung, K.P. ; Groeseneken, G.
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
An in-depth analysis of the impact of hot-carrier stress (HCS) and oxide breakdown on 90 nm RFCMOS at low power bias is presented. Analog devices are found to be highly vulnerable to HCS under this condition. The post-breakdown MOSFET RF characteristics are completely explained by considering the location and the resistor-like behavior of the breakdown path.
Keywords :
CMOS integrated circuits; MOSFET; hot carriers; low-power electronics; radiofrequency integrated circuits; semiconductor device breakdown; semiconductor device measurement; semiconductor device models; 90 nm; HCS; RF performance vulnerability; breakdown path resistor-like behavior; hot carrier stress; low power RFCMOS; low power bias; oxide breakdown; post-breakdown MOSFET RF characteristics; CMOS technology; Degradation; Electric breakdown; Energy consumption; Hot carriers; Logic devices; MOSFET circuits; Radio frequency; Stress; Virtual colonoscopy;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269208
