Silicon carbide power devices - status and upcoming challenges

The paper will give an overview of the status of SiC power devices with a focus on commercial, non- military applications. Besides the use in power supplies SiC was able to enter the drives market too. This was possible because of considerable progress in devices power rating, making it possible to implement these chips in modules. Performance and cost issues will be mentioned in order to explain why the SiC market is growing more slowly than numerous market analyses may suggest. However, it will be shown that the position of SiC in power electronics is manifested. For the further penetration of these components into applications the use of efficiency advantages given by the use of SiC components will be worked out as an important argument for justifying the higher device costs. The current version of commercially available diodes will be mentioned as well as an insight into the field of SiC power switches. A special focus will be given to the question of a right concept, topics like MOSFET and JFET as well as normally on and normally off will be addressed. Pro´s and cons of switches as well as the field of high voltage SiC devices will be highlighted in the final paragraphs as well as a short guide to decide whether the use of SiC components should be considered or not in certain applications.