Intrinsically switchable, BST-on-silicon composite FBARs

Author

Sis, Seyit A. ; Lee, Victor ; Mortazawi, Amir

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of Michigan, Ann Arbor, MI, USA

fYear

2011

fDate

5-10 June 2011

Firstpage

1

Lastpage

4

Abstract

This paper presents a DC voltage dependent switchable, composite thin film bulk acoustic wave (FBAR) resonator at 1.82 GHz. The resonator consists of barium stronium titanate-on-silicon in which barium stronium titanate (BST) is primarily used for transduction. The electrostrictive property of BST is exploited to turn the resonator on and off by applying a DC voltage. The device exhibits a quality factor of 157 and 301 at its series and parallel resonance frequencies, respectively. The preliminary result of an acoustically coupled thickness mode filter based on BST-on-Silicon structure is also presented. The insertion loss of the filter is 15 dB at 2.03 GHz. When the resonator is turned off (no DC bias), it behaves like a capacitor. This is the first demonstration of a BST-on-Silicon FBAR resonator.

Keywords

Q-factor; UHF filters; UHF resonators; acoustic resonator filters; barium compounds; bulk acoustic wave devices; composite materials; elemental semiconductors; silicon; strontium compounds; thin films; BST-on-silicon composite; BaSrTiO₃; DC voltage dependent switchable; acoustically coupled thickness mode filter; barium stronium titanate-on-silicon; composite thin film bulk acoustic wave resonator; electrostrictive property; frequency 1.82 GHz; parallel resonance frequencies; quality factor; switchable FBAR; Film bulk acoustic resonators; Filter banks; Microwave filters; Resonant frequency; Resonator filters; Switches; Titanium compounds; Barium stronium titanate; FBAR resonators; acoustically coupled filters; ferroelectric devices; intrinsically switchable devices; radio-frequency (RF) microelectromechanical systems (RF-MEMS);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest (MTT), 2011 IEEE MTT-S International

Conference_Location

Baltimore, MD

ISSN

0149-645X

Print_ISBN

978-1-61284-754-2

Electronic_ISBN

0149-645X

Type

conf

DOI

10.1109/MWSYM.2011.5972960

Filename

5972960