Title :
A 104μW EMI-resisting bandgap voltage reference achieving −20dB PSRR, and 5% DC shift under a 4dBm EMI level
Author :
Shiheng Yang ; Pui-In Mak ; Martins, Rui P.
Author_Institution :
State Key Lab. of Analog & Mixed-Signal VLSI & Fac. of Sci. & Technol. (ECE), Univ. of Macau, Macao, China
Abstract :
This paper describes an electromagnetic interference (EMI)-resisting Bandgap voltage reference. Its basic topology is a Kuijk Bandgap with a PMOS pass device and an active load, improved to generate a low voltage output (441.3mV) via substituting BJT by MOSFET while preserving a low temperature coefficient (TC). A double differential pair and a power-supply independent bias jointly enhance the EMI resisting ability. Simulated in 65nm CMOS, the achieved PSRR is -20dB, TC is 10.65 ppm/°C and DC shift is 5% up to a 4dBm EMI level. The total power consumption is 104μW.
Keywords :
CMOS integrated circuits; electromagnetic interference; energy gap; integrated circuit design; integrated circuit noise; network topology; reference circuits; BJT; CMOS; DC shift; EMI; Kuijk bandgap; MOSFET; PMOS pass device; PSRR; bandgap voltage reference; double differential pair; electromagnetic interference; low temperature coefficient; power 104 muW; power-supply independent bias; size 65 nm; voltage 441.3 mV; CMOS integrated circuits; Electromagnetic interference; Logic gates; MOSFET; Photonic band gap; Power demand; Topology;
Conference_Titel :
Circuits and Systems (APCCAS), 2014 IEEE Asia Pacific Conference on
Conference_Location :
Ishigaki
DOI :
10.1109/APCCAS.2014.7032718
