Fabrication of pentacene organic field-effect transistors containing SiO/sub 2/ nanoparticle thin film as the gate dielectric

Author

Tianhong Cui ; Guirong Liang ; Jingshi Shi

Author_Institution

Inst. for Micromanufacturing, Louisiana Tech. Univ., Ruston, LA, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Pentacene organic field-effect transistors (OFETs) were fabricated and investigated with thermal oxide and a self-assembled SiO/sub 2/ (SA-SiO/sub 2/) nanoparticle thin-film as the gate dielectrics. SA-SiO/sub 2/ film functions well as a gate dielectric with a breakdown field larger than 0.57 MV/cm and leakage current less than 2 nA/mm/sup 2/ with an applied voltage of 20 V. Being a low-cost and low-temperature process, self-assembly is extremely suitable for OFET fabrication. Dual-gate pentacene FETs containing SA-SiO/sub 2/ thin-film are presented as a new structure with good performance.

Keywords

circuit layout CAD; dielectric thin films; field effect transistors; leakage currents; nanoparticles; organic semiconductors; self-assembly; semiconductor device breakdown; silicon compounds; 20 V; OFET; SiO/sub 2/; dielectric breakdown field; dual-gate pentacene FET; leakage current; low-cost low-temperature process; nanoparticle thin film gate dielectric; pentacene organic field-effect transistors; self-assembled thin-film; self-assembly; thermal oxide thin-film; Breakdown voltage; Dielectric breakdown; Dielectric thin films; FETs; Fabrication; Leakage current; OFETs; Organic thin film transistors; Pentacene; Self-assembly;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269244

Filename

1269244