Title :
High-gain, low-noise monolithic HEMT distributed amplifiers up to 60 GHz
Author :
Yuen, C. ; Nishimoto, C. ; Glenn, M. ; Webb, C. ; Bandy, S. ; Zdasiuk, G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
Ultrabroad-bandwidth distributed amplifiers with cutoff frequencies of 45 to 60 GHz were developed using 0.25- mu m high-electron-mobility transistors (HEMTs) with a mushroom gate profile. Both single and cascode HEMTs were used as the active devices in the amplifiers. A measured gain as high as 10+or-1 dB from 5 to 50 GHz and a gain of 8+or-1 dB from 5 to 60 GHz, respectively, were achieved from amplifiers using cascode HEMTs. The measured noise figure for these amplifiers is approximately 3-4 dB in the Ka-band. The chip size is 2.3*0.9 mm. Device considerations, circuit design, monolithic IC fabrication, and the measured performance of the amplifiers are outlined.<>
Keywords :
MMIC; field effect integrated circuits; high electron mobility transistors; linear integrated circuits; microwave amplifiers; wideband amplifiers; 0.25 micron; 3 to 4 dB; 5 to 60 GHz; 8 to 10 dB; EHF; HEMT; Ka-band; MM-wave operation; SHF; cascode devices; distributed amplifiers; high-electron-mobility transistors; low-noise; millimetre wave type; monolithic IC fabrication; mushroom gate profile; ultrabroadband type; Circuit synthesis; Cutoff frequency; Distributed amplifiers; Gain measurement; HEMTs; MODFETs; Monolithic integrated circuits; Noise figure; Noise measurement; Semiconductor device measurement;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MCS.1990.110930
