Title :
Low-damage ECR-plasma-etching technique for SrBi/sub 2/Ta/sub 2/O/sub 9/ (SBT) capacitor for FeRAM devices
Author :
Maejima, Y. ; Saitoh, S. ; Hayashi, Y.
Author_Institution :
Microelectronics Research Laboratories, NEC Corporation 1120, Shimokuzawa, Sagamihara, Kanagawa 229, Japan
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
DOI :
10.1109/VLSIT.1997.623736
