Octave band eleven watt power amplifier MMIC

Author

Komiak, J.J.

Author_Institution

General Electr. Co., Syracuse, NY, USA

fYear

1990

fDate

7-8 May 1990

Firstpage

35

Lastpage

38

Abstract

The design and performance of a two-stage 3.0-6.0 GHz MMIC (monolithic microwave IC) power amplifier that has established a new standard for power output and bandwidth in MMIC form is reported. The amplifier produces 11 W+or-1 dB from 3.0 to 6.0 GHz, with maximum power outputs of 13.5 W and 10.5 W at the respective S and C radar bands, and a minimum power of 9 W. This benchmark eclipses the best power level reported earlier for both two-stage (8 W at C-band) and single-stage (10 W at C-band) narrowband MMIC power amplifiers with a continuous bandwidth coverage of 67%. The yield of this MMIC, based upon 0.5- mu m gate-length selective-implant MESFET technology, averaged 43%, with a 57% yield from the best wafer.<>

Keywords

MMIC; field effect integrated circuits; linear integrated circuits; microwave amplifiers; power amplifiers; 0.5 micron; 3 to 6 GHz; 9 to 13.5 W; C-band; MMIC; S-band; SHF; monolithic microwave IC; octave band; power amplifier; radar bands; selective-implant MESFET technology; two-stage type; Bandwidth; Integrated circuit interconnections; Laboratories; MESFET circuits; MIM capacitors; MMICs; Power amplifiers; Radar; Resistors; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110933

Filename

110933