Title :
Fabrication of planar InP/InGaAs avalanche photodiode without guard rings
Author :
Kim, D.S. ; Lee, S.Y. ; Lee, J.H. ; Oh, G.S. ; Kim, N.J. ; Lee, J.W. ; Kim, A.S. ; Sin, Y.K.
Author_Institution :
Photonic Devices Lab., Hyundai Electron. Ind. Co. Ltd., Kyoungki, South Korea
Abstract :
An avalanche photodiode (APD) without guard rings is described. Single growth InP-InGaAs separate absorption grading charge sheet multiplication (SAGCM) APDs has been fabricated to suppress the edge breakdown. A very low dark current of 0.77 nA at 0.98 of the breakdown voltage (VB) and M=90 at 1.5 μA of primary photocurrent was measured for a 50 μm-diameter device. The gain-bandwidth product was estimated 64 GHz
Keywords :
III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; optical fabrication; photoconductivity; semiconductor growth; vapour phase epitaxial growth; 0.77 nA; 1.5 muA; 50 mum; InP-InGaAs; InP-InGaAs planar avalanche photodiode fabrication; InP-InGaAs separate absorption grading charge sheet multiplication APDs; breakdown voltage; edge breakdown; gain-bandwidth product; guard rings; primary photocurrent; single growth; very low dark current; Avalanche photodiodes; Bandwidth; Capacitance; Dark current; Electric breakdown; Electrons; Fabrication; Gain measurement; Indium gallium arsenide; Indium phosphide;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.571845
