A 2.5 watt X-band high efficiency MMIC amplifier

Author

Hwang, V.D. ; Shih, Y.C. ; Chi, T.Y. ; Wang, D.C.

Author_Institution

Hughes Aircraft Co., Torrance, CA, USA

fYear

1990

fDate

7-8 May 1990

Firstpage

39

Lastpage

41

Abstract

A broadband two-stage X-band high-efficiency power amplifier using ion-implanted MMIC (monolithic microwave IC) technology is presented. The amplifier has 2.3-W to 2.9-W CW output power, 31% to 35% power-added efficiency, and 11-dB power gain across the frequency band. These data represent state-of-the-art performance for an MMIC amplifier. The amplifier design utilizes the waveform-balance nonlinear CAD. The optimum load impedances of the FETs for power matching are first generated by computer. These data are then used to optimize the matching circuits. The circuit is fabricated by the standard Hughes 0.5- mu m ion-implantation MMIC process. The doping profile is optimized for high breakdown voltage and transconductance. The amplifier is a true monolithic circuit since it does not use any offchip combining or tuning.<>

Keywords

MMIC; field effect integrated circuits; linear integrated circuits; microwave amplifiers; power amplifiers; wideband amplifiers; 11 dB; 2.3 to 2.9 W; 31 to 35 percent; FETs; MESFET; MMIC amplifier; X-band; broadband; high breakdown voltage; high efficiency; high transconductance; ion-implantation MMIC process; matching circuits; monolithic microwave IC; optimum load impedances; power amplifier; power matching; waveform-balance nonlinear CAD; Broadband amplifiers; High power amplifiers; MMICs; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Power amplifiers; Power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110934

Filename

110934