5 W monolithic HBT amplifier for broadband X-band applications

Author

Bayraktaroglu, B. ; Khatibzadeh, M.A. ; Hudgens, R.D.

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

1990

fDate

7-8 May 1990

Firstpage

43

Lastpage

46

Abstract

The first monolithic heterojunction bipolar transistor (HBT) amplifier producing greater than 5-W output power at X-band frequencies is reported. Monolithic impedance-matching circuits were designed using measured and modeled large-signal device parameters at the unit-cell level. Unit cells were then connected in parallel to obtain an output-power increase proportional to unit-cell count. A single-stage, totally monolithic amplifier was fabricated using 2.4-mm-emitter-length AlGaAs-GaAs HBT for operation in the 7-10-GHz frequency range. A maximum of 5.3-W CW output power was obtained in this frequency range with 4.6-dB gain and 22% power-added efficiency.<>

Keywords

MMIC; bipolar integrated circuits; heterojunction bipolar transistors; linear integrated circuits; microwave amplifiers; power amplifiers; wideband amplifiers; 22 percent; 4.6 dB; 5 to 5.3 W; 7 to 10 GHz; AlGaAs-GaAs; SHF; X-band applications; broadband; heterojunction bipolar transistor; impedance-matching circuits; monolithic HBT amplifier; Broadband amplifiers; Frequency; Heterojunction bipolar transistors; High power amplifiers; Impedance; Phased arrays; Power amplifiers; Power generation; Radar; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110935

Filename

110935