Title :
2D QM simulation and optimization of decanano non-overlapped MOS devices
Author :
Gusmeroli, R. ; Spinelli, Alessandro S. ; Pirovano, A. ; Lacaita, A.L. ; Boeuf, F. ; Skotnicki, T.
Author_Institution :
Dipt. di Elettronica a Informazione, Politecnico di Milano, Italy
Abstract :
Two-dimensional quantum-mechanical (2D QM) simulations of non-overlapped MOS devices are presented, validated through comparison against experimental data. It is shown that 2D QM simulations are needed to accurately predict the experiments and can thus be used to explore the design trade-offs and optimize the performance. Simulations show that nonoverlapped MOS structures can provide an improvement in switching time up to about 50% with respect to conventional approaches.
Keywords :
MOSFET; optimisation; quantum theory; semiconductor device models; 2D quantum-mechanical simulation; MOSFET; decanano nonoverlapped MOS devices; design trade-offs; device optimization; switching time improvement; Capacitance; Circuit simulation; Computational modeling; Delay; Design optimization; Logic circuits; MOS devices; MOSFETs; Predictive models; Silicon;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269257
