A 1T/1C Ferrodectric RAM Using A Double-level Metal Process For Highly Scalable Nonvolatile Memory

Author

Dong-Jin Jung ; Nam-Soo Kang ; Sung-Yung Lee ; Bon-Jae Koo ; Jin-Woo Lee ; Joo-Han Park ; Yoon-Soo Chun ; Mi-Hyang Lee ; Byung-Gil Jeon ; Sang-In Lee ; Tae-Eam Shim ; Chang-Gyu Hwang

Author_Institution

Technology Development, Semiconductor R & D Center, Samsung Elecb-onics, Co. San#24, Nongseo-Lee, Kiheung-Eup, Yongin-Ci~, Kyungki-Do, Korea, 449-900

fYear

1997

fDate

10-12 June 1997

Firstpage

139

Lastpage

140

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on

Print_ISBN

4-930813-75-1

Type

DOI

10.1109/VLSIT.1997.623737

Filename

623737

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