Title :
A monolithic GaAs HBT upconverter
Author :
Umeda, A.Y. ; Matsuno, C.T. ; Oki, A.K. ; Dow, G.S. ; Kobayashi, K.W. ; Umemoto, D.K. ; Kim, M.E.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
A 2.6-GHz to 5.5-GHz upconverter mixer has been implemented with GaAs heterojunction bipolar transistor (HBT) IC technology. The upconverter consists of a transconductance multiplier based on a Gilbert cell topology, followed by a two-stage Darlington-coupled amplifier. Measured conversion gain is greater than 20 dB up to an RF output frequency of 5.5 GHz. This upconverter is believed to be the first reported using the GaAs HBT technology.<>
Keywords :
III-V semiconductors; MMIC; bipolar integrated circuits; frequency multipliers; gallium arsenide; heterojunction bipolar transistors; linear integrated circuits; mixers (circuits); 2.6 to 5.5 GHz; 20 dB; GaAs; Gilbert cell topology; HBT upconverter; IC technology; MMIC; SHF; conversion gain; heterojunction bipolar transistor; mixer; transconductance multiplier; two-stage Darlington-coupled amplifier; Bipolar integrated circuits; Frequency measurement; Gain measurement; Gallium arsenide; Heterojunction bipolar transistors; Mixers; Radio frequency; Radiofrequency amplifiers; Topology; Transconductance;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MCS.1990.110943
