MIMIC technology transportability

Author

Perkins, W.H. ; Jansen, N. ; Midford, T.A. ; Niehaus, W.C. ; Reep, D.H. ; Tenedorio, J.

Author_Institution

General Electric, Syracuse, NY, USA

fYear

1990

fDate

7-8 May 1990

Firstpage

91

Lastpage

94

Abstract

A primary goal of the Defense Advanced Research Projects Agency´s (DARPA) microwave and millimeter-wave monolithic integrated circuit (MIMIC) program is the demonstration of process-tolerant designs that can be fabricated in multiple facilities at affordable cost. A Hughes/General Electric team´s experience with transporting the design and process for a C-band 3-W, two-stage amplifier is described. This amplifier, based on a mature GE design, is now being produced by the five team foundries (Hughes, GE, AT&T, Harris Microwave Semiconductor, and M/A-COM). Problem areas and their solutions are highlighted. The authors detail the cooperative exchange of technology which has enabled transport of this C-band MIMIC and describe the fabrication status, examine process variations, and compare data obtained.<>

Keywords

MMIC; integrated circuit technology; microwave amplifiers; 3 W; AT&T; C-band; DARPA; Defense Advanced Research Projects; General Electric; Harris Microwave Semiconductor; Hughes; MIMIC technology transportability; MM-wave IC; MMIC; fabrication status; millimeter-wave; monolithic integrated circuit; process variations; process-tolerant designs; two-stage amplifier; Design methodology; Fabrication; Foundries; Integrated circuit technology; MIMICs; MMICs; Millimeter wave technology; Monolithic integrated circuits; Phased arrays; Process design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110946

Filename

110946