Multifunction chip set for T/R module receive path

Author

Willems, D. ; Bahl, I. ; Pollman, M. ; Jorgenson, J. ; Griffin, E. ; Coluzzi, M. ; Tantod, S. ; Andricos, C.

Author_Institution

ITT Gallium Arsenide Technol. Center, Roanoke, VA, USA

fYear

1990

fDate

7-8 May 1990

Firstpage

95

Lastpage

98

Abstract

The design and test results for multifunction monolithic microwave ICs (MMICs) for C-band transmit/receive (T/R) modules are presented. This small-signal chip set contains the entire receive path (5 stages of amplification and 10 passive devices) in just three chips. These ICs, fabricated with the multifunctional self-aligned gate (MSAG) process, demonstrate a high level of integration, excellent performance. and a good yield. The variable-gain low-noise amplifier has a 30+or-1-dB gain, and a 2.5-dB noise figure, the phase shifter single-pole, double-throw (SPDT) switch has an 8+or-1-dB loss, and the buffer amplifier has a 6.5+or-0.2-dB gain and a 3.5-dB noise figure. Average yield for these circuits was 40% or better.<>

Keywords

MMIC; radar equipment; 2.5 dB; 3.5 dB; 30 dB; 6.5 dB; 8 dB; C-band; MMICs; MSAG; SPDT switch; T/R module receive path; low-noise amplifier; monolithic microwave ICs; multifunction chip set; multifunctional self-aligned gate; phase shifter; single pole/double throw switch; small-signal chip set; variable-gain LNA; Attenuators; Circuit noise; Costs; Gain; Gallium arsenide; Low-noise amplifiers; Noise figure; Phase shifters; Switches; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990

Conference_Location

Dallas, TX, USA

Type

conf

DOI

10.1109/MCS.1990.110947

Filename

110947