DocumentCode
2588927
Title
Organic materials for high-density non-volatile memory applications
Author
Sezi, R. ; Walter, A. ; Engl, R. ; Maltenberger, A. ; Schumann, J. ; Kund, M. ; Dehm, C.
Author_Institution
Infineon Technol. AG, Erlangen, Germany
fYear
2003
fDate
8-10 Dec. 2003
Abstract
This paper describes organic charge transfer complexes exhibiting conductance switching and their potential for use as an active layer in high density memories. The preferred material demonstrates data retention for >8 months, promising values for endurance and imprint as well as a high potential for low voltage operation and scalability.
Keywords
organic compounds; random-access storage; conductance switching; data retention time; donor/acceptor complexes; endurance; high-density memory active layer; imprint; low voltage operation; memory scalability; nonvolatile memory; organic charge transfer complexes; Charge transfer; Conducting materials; Dielectric materials; Electrodes; Inorganic materials; Nonvolatile memory; Organic materials; Scalability; Stability; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269272
Filename
1269272
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