Title :
Organic materials for high-density non-volatile memory applications
Author :
Sezi, R. ; Walter, A. ; Engl, R. ; Maltenberger, A. ; Schumann, J. ; Kund, M. ; Dehm, C.
Author_Institution :
Infineon Technol. AG, Erlangen, Germany
Abstract :
This paper describes organic charge transfer complexes exhibiting conductance switching and their potential for use as an active layer in high density memories. The preferred material demonstrates data retention for >8 months, promising values for endurance and imprint as well as a high potential for low voltage operation and scalability.
Keywords :
organic compounds; random-access storage; conductance switching; data retention time; donor/acceptor complexes; endurance; high-density memory active layer; imprint; low voltage operation; memory scalability; nonvolatile memory; organic charge transfer complexes; Charge transfer; Conducting materials; Dielectric materials; Electrodes; Inorganic materials; Nonvolatile memory; Organic materials; Scalability; Stability; Temperature;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269272
