Title :
Ku- and K-band GaAs MMIC varactor-tuned FET oscillators using MeV ion-implanted buried-layer back contacts
Author :
McNally, P.J. ; Smith, T. ; Phelleps, F.R. ; Hogan, K.M. ; Smith, B. ; Deitrich, H.
Author_Institution :
COMSAT Lab., Clarksburg, MD, USA
Abstract :
An all ion-implant, planar process has been used to fabricate high-Q hyperabrupt carrier profile varactor diodes for use in GaAs monolithic microwave IC (MMIC) voltage-controlled oscillators (VCOs) with the state-of-the-art performance. These GaAs varactor-tuned FET oscillators operate at up to 24 GHz with a tuning bandwidth of 5 GHz in K-band. The high-Q varactors feature a buried N/sup +/ layer created by ion-implantation at up to 6 MeV. Separately masked implanted N/sup +/ areas connect the buried layer to ohmic contacts at the surface. A varactor f/sub c/ of 1600 GHz was obtained at 0.09 pF. The design, fabrication, and measurements of varactors and MMIC VCOs are described.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; ion implantation; microwave oscillators; tuning; varactors; variable-frequency oscillators; 0.09 pF; 24 GHz; 5 GHz; 6 MeV; GaAs; K-band; Ku-band; MMIC; SHF; VCOs; buried-layer back contacts; high-Q varactors; hyperabrupt carrier profile varactor; ion-implant; ion-implantation; masked implanted N/sup +/ areas; monolithic microwave IC; planar process; varactor-tuned FET oscillators; voltage-controlled oscillators; Diodes; Gallium arsenide; MMICs; Microwave FET integrated circuits; Microwave FETs; Microwave integrated circuits; Microwave oscillators; Monolithic integrated circuits; Varactors; Voltage-controlled oscillators;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MCS.1990.110950
