Title :
A monolithic 94 GHz balanced mixer
Author :
Adelseck, B. ; Dieudonine, J.M. ; Schmegner, K.E. ; Colquhoun, A. ; Ebert, G. ; Selders, J.
Author_Institution :
Telefunken Systemtech., Ulm, Germany
Abstract :
On the basis of a recently developed GaAs technology which allows the realization of millimeter-wave Schottky mixer diodes and MESFETs on the same monolithic chip, different 94-GHz monolithic mixers have been fabricated. The Schottky diodes show cutoff frequencies of up to 2.3 THz. and MESFETs with typical F/sub max/ (MAG=1) of about 90 GHz have been measured. The mixer chips show conversion losses of less than 8 dB combined with noise figures below 6 dB (double sideband). The technology, mixer design, and measurement results are outlined.<>
Keywords :
III-V semiconductors; MMIC; Schottky gate field effect transistors; Schottky-barrier diodes; field effect integrated circuits; gallium arsenide; mixers (circuits); 94 GHz; EHF; GaAs technology; MESFETs; MM-wave diodes; Schottky mixer diodes; balanced mixer; monolithic chip; Cutoff frequency; Frequency measurement; Gallium arsenide; MESFETs; Millimeter wave measurements; Millimeter wave technology; Mixers; Noise figure; Schottky diodes; Semiconductor device measurement;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MCS.1990.110951
