Title :
Recent progress in FET-type ferroelectric memories
Author_Institution :
Frontier Collaborative Res. Center, Tokyo Inst. of Technol., Yokohama, Japan
Abstract :
The recent progress in FET-type ferroelectric memories is reviewed. Improvement of the data retention characteristics in MFIS (M; metal, F; ferroelectric, I; insulator, S; semiconductor)- and MFMIS-FETs is first described and recent experimental results are presented. Then, it is shown that a 1T2C-type cell, in which two ferroelectric capacitors with the same area are connected to the gate of a MOSFET, is useful in improving the data retention characteristics, and operation and integration characteristics of the cells are discussed.
Keywords :
MOSFET; ferroelectric capacitors; ferroelectric storage; 1T2C-type cell; FET type ferroelectric memories; FeRAM; MFIS; MFMIS-FET; MOSFET; data retention characteristics; ferroelectric capacitors; metal-ferroelectric-insulator-semiconductor structure; Buffer layers; Capacitors; Dielectric substrates; FETs; Ferroelectric films; Ferroelectric materials; MOSFET circuits; Nonvolatile memory; Polarization; Random access memory;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269274
