Title :
An X-band monolithic double double-balanced mixer for high dynamic receiver application
Author :
Ton, T.N. ; Dow, G.S. ; Chen, T.H. ; LaCon, M. ; Lin, T.S. ; Bui, S. ; Yang, D.
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
Abstract :
An X-band monolithic double double-balanced mixer having Schottky barrier diodes fabricated with a MESFET process is described. This monolithic mixer demonstrates RF performance comparable to that of a hybridized mixer. The mixer achieves a high input IP/sub 3/ of 20 dBm and a 1-dB compression output power of 3.6 dBm at a 20-dBm local oscillator drive. The measured conversion loss is less than 10 dB from 7 to 10 GHz with an IF output frequency of 5 GHz. To the authors´ knowledge, this represents the highest IP/sub 3/ performance among the reported monolithic mixers.<>
Keywords :
MMIC; Schottky-barrier diodes; mixers (circuits); radio receivers; 10 dB; 5 to 10 GHz; MESFET process; RF performance; SHF; Schottky barrier diodes; X-band; conversion loss; double double-balanced mixer; high dynamic receiver application; monolithic mixer; Frequency conversion; Frequency measurement; Local oscillators; Loss measurement; MESFETs; Mixers; Power generation; Radio frequency; Schottky barriers; Schottky diodes;
Conference_Titel :
Microwave and Millimeter-Wave Monolithic Circuits Symposium, 1990. Digest of Papers., IEEE 1990
Conference_Location :
Dallas, TX, USA
DOI :
10.1109/MCS.1990.110952
