Title :
A 65 nm CMOS technology with a high-performance and low-leakage transistor, a 0.55 /spl mu/m/sup 2/ 6T-SRAM cell and robust hybrid-ULK/Cu interconnects for mobile multimedia applications
Author :
Nakai, S. ; Kojima, M. ; Misawa, N. ; Miyajima, M. ; Asai, S. ; Inagaki, S. ; Iba, Y. ; Ohba, Tsuyoshi ; Kase, M. ; Kitada, H. ; Satoh, S. ; Shimizu, N. ; Sugiura, I. ; Sugimoto, F. ; Setta, Y. ; Tanaka, T. ; Tamura, N. ; Nakaishi, M. ; Nakata, Y. ; Nakah
Author_Institution :
Fujitsu Ltd., Tokyo, Japan
Abstract :
This paper presents a 65 nm CMOS technology for mobile multimedia applications. The reduction of interconnect capacitance is essential for high-speed data transmission and small power consumption for mobile core chips. We have chosen a hybrid ULK structure which consists of NCS (nano-clustering silica; k=2.25) at the wire level and SiOC (k=2.9) at the via level. Although NCS is a porous material, the NCS/SiOC structure has sufficient mechanical strength to endure CMP pressure and wire bonding. Successfully fabricated 200 nm-pitch hybrid-ULK/Cu interconnects and a high-performance and low-leakage transistors meet the electrical targets from the circuit requirements. Moreover, an embedded 6T-SRAM with a 0.55 /spl mu/m/sup 2/ small cell size has been achieved.
Keywords :
CMOS integrated circuits; CMOS memory circuits; SRAM chips; copper; integrated circuit interconnections; integrated circuit manufacture; integrated circuit metallisation; mechanical strength; nanostructured materials; porous materials; silicon compounds; 200 nm; 65 nm; 6T-SRAM cell; CMOS technology; CMP pressure; Cu; NCS; SiO/sub 2/; SiOC; high-performance transistor; high-speed data transmission; interconnect capacitance; low-leakage transistor; mechanical strength; mobile core chips; mobile multimedia applications; nano-clustering silica; porous silica; robust hybrid-ULK/Cu interconnects; wire bonding; CMOS technology; Capacitance; Data communication; Energy consumption; Integrated circuit interconnections; Laboratories; Robustness; Silicon compounds; Transistors; Wire;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269280
