Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios

Author

Sung-Yong Chung ; Niu Jin ; Ronghua Yu ; Berger, P.R. ; Thompson, P.E. ; Lake, R. ; Rommel, S.L. ; Kurinec, S.K.

Author_Institution

Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

We report the first monolithic vertical integration of a Si/SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics.

Keywords

Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; quantum theory; resonant tunnelling diodes; semiconductor device measurement; semiconductor materials; silicon; 293 to 298 K; NDR device; RITD-HBT structure latching operation; Si-SiGe; Si-based resonant interband tunneling diode; Si/SiGe HBT; adjustable peak current density; adjustable peak-to-valley current ratios; collector current PCD; common emitter configuration; monolithic vertical integration; quantum mechanics; silicon substrate; switching operation; three-terminal negative differential resistance device; Current density; Diodes; Germanium silicon alloys; Heterojunction bipolar transistors; Mechanical factors; Quantum mechanics; Resonance; Silicon germanium; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269283

Filename

1269283