Title :
Monolithic vertical integration of Si/SiGe HBT and Si-based resonant interband tunneling diode demonstrating latching operation and adjustable peak-to-valley current ratios
Author :
Sung-Yong Chung ; Niu Jin ; Ronghua Yu ; Berger, P.R. ; Thompson, P.E. ; Lake, R. ; Rommel, S.L. ; Kurinec, S.K.
Author_Institution :
Dept. of Electr. Eng., Ohio State Univ., Columbus, OH, USA
Abstract :
We report the first monolithic vertical integration of a Si/SiGe HBT with a Si-based resonant interband tunnel diode (RITD) on a silicon substrate. This enables a 3-terminal negative differential resistance (NDR) device and the resulting devices have the distinguishing characteristics of adjustable peak-to-valley current ratio and adjustable peak current density (PCD) in the collector current under common emitter configuration at room temperature. We experimentally demonstrate its latching property and switching operation based on quantum mechanics.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; quantum theory; resonant tunnelling diodes; semiconductor device measurement; semiconductor materials; silicon; 293 to 298 K; NDR device; RITD-HBT structure latching operation; Si-SiGe; Si-based resonant interband tunneling diode; Si/SiGe HBT; adjustable peak current density; adjustable peak-to-valley current ratios; collector current PCD; common emitter configuration; monolithic vertical integration; quantum mechanics; silicon substrate; switching operation; three-terminal negative differential resistance device; Current density; Diodes; Germanium silicon alloys; Heterojunction bipolar transistors; Mechanical factors; Quantum mechanics; Resonance; Silicon germanium; Temperature; Tunneling;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269283
