DocumentCode
2589172
Title
Threshold voltage control in NiSi-gated MOSFETs through silicidation induced impurity segregation (SIIS)
Author
Kedzierski, J. ; Boyd, D. ; Ronsheim, P. ; Zafar, S. ; Newbury, J. ; Ott, J. ; Cabral, C., Jr. ; Ieong, M. ; Haensch, W.
Author_Institution
Semicond. Res. & Dev. Center, IBM T. J. Watson Res. Center, Yorktown Heights, NY, USA
fYear
2003
fDate
8-10 Dec. 2003
Abstract
Silicidation-induced impurity segregation was found to be an excellent method for adjusting the workfunction of NiSi gates. Continuous workfunction control over 300 mV was obtained with P, As, and Sb used as gate impurities. Fully depleted silicon-on-insulator devices were fabricated with a tunable V/sub t/.
Keywords
MOSFET; antimony; arsenic; doping profiles; impurity distribution; nickel compounds; phosphorus; segregation; silicon-on-insulator; work function; 300 mV; MOSFET threshold voltage control; NiSi-gated MOSFET; NiSi:As; NiSi:P; NiSi:Sb; SIIS; SOI; fully depleted silicon-on-insulator devices; gate impurities; silicidation induced impurity segregation; tunable threshold voltage; workfunction control; Annealing; Dielectrics; Doping; Implants; MOSFETs; Semiconductor impurities; Silicidation; Thickness control; Threshold voltage; Voltage control;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269288
Filename
1269288
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