Compatibility of dual metal gate electrodes with high-k dielectrics for CMOS

Author

JaeHoon Lee ; You-Seok Suh ; Lazar, H. ; Jha, R. ; Gurganus, J. ; Yanxia Lin ; Misra, V.

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Dual metal electrodes such as Ru, Ru-Ta alloy, TaN and TaSiN were investigated on low EOT single layer HfO/sub 2/ and stacked HfO/sub 2//SiO/sub 2/ gate dielectrics. It was found that the work function values of metal gates on HfO/sub 2/ and on SiO/sub 2/ are similar. Thermal anneal studies of selected metals on the above dielectrics were also performed to evaluate the change in EOT and V/sub FB/ values.

Keywords

MOS capacitors; annealing; dielectric thin films; hafnium compounds; ruthenium; ruthenium alloys; silicon compounds; tantalum alloys; tantalum compounds; work function; Ru-HfO/sub 2/; Ru-HfO/sub 2/-SiO/sub 2/; RuTa-HfO/sub 2/; RuTa-HfO/sub 2/-SiO/sub 2/; TaN-HfO/sub 2/; TaN-HfO/sub 2/-SiO/sub 2/; TaSiN-HfO/sub 2/; TaSiN-HfO/sub 2/-SiO/sub 2/; bulk CMOS devices; dual metal gate electrodes; electrode/dielectric compatibility; high-k dielectrics; low EOT single layer dielectrics; metal gates; stacked dielectrics; thermal anneal; work function; Capacitance-voltage characteristics; Electrodes; Hafnium; High K dielectric materials; High-K gate dielectrics; Interface states; MOS devices; Rapid thermal annealing; Sputtering; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269290

Filename

1269290