Title :
Compatibility of dual metal gate electrodes with high-k dielectrics for CMOS
Author :
JaeHoon Lee ; You-Seok Suh ; Lazar, H. ; Jha, R. ; Gurganus, J. ; Yanxia Lin ; Misra, V.
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
Abstract :
Dual metal electrodes such as Ru, Ru-Ta alloy, TaN and TaSiN were investigated on low EOT single layer HfO/sub 2/ and stacked HfO/sub 2//SiO/sub 2/ gate dielectrics. It was found that the work function values of metal gates on HfO/sub 2/ and on SiO/sub 2/ are similar. Thermal anneal studies of selected metals on the above dielectrics were also performed to evaluate the change in EOT and V/sub FB/ values.
Keywords :
MOS capacitors; annealing; dielectric thin films; hafnium compounds; ruthenium; ruthenium alloys; silicon compounds; tantalum alloys; tantalum compounds; work function; Ru-HfO/sub 2/; Ru-HfO/sub 2/-SiO/sub 2/; RuTa-HfO/sub 2/; RuTa-HfO/sub 2/-SiO/sub 2/; TaN-HfO/sub 2/; TaN-HfO/sub 2/-SiO/sub 2/; TaSiN-HfO/sub 2/; TaSiN-HfO/sub 2/-SiO/sub 2/; bulk CMOS devices; dual metal gate electrodes; electrode/dielectric compatibility; high-k dielectrics; low EOT single layer dielectrics; metal gates; stacked dielectrics; thermal anneal; work function; Capacitance-voltage characteristics; Electrodes; Hafnium; High K dielectric materials; High-K gate dielectrics; Interface states; MOS devices; Rapid thermal annealing; Sputtering; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269290
