Title :
Universal recovery behavior of negative bias temperature instability [PMOSFETs]
Author :
Rangan, S. ; Mielke, N. ; Yeh, E.C.C.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
PMOSFETs experiencing negative bias temperature instability (NBTI) recover after stress is removed. We show for the first time that: (1) the recovery can reach 100% at 25/spl deg/C; (2) recovery has a universal behavior independent of stress voltage, stress time and temperature (below 25/spl deg/C); and (3) the recovered devices degrade at the same rate when re-stressed, indicating that recovery resets the degraded device to its original state. We propose a three step model to describe this mechanism: (i) voltage accelerated degradation, (ii) bias and degradation independent recovery and (iii) temperature driven "lock-in" step. We believe that the competing effects of these three steps corrupt common field/temperature acceleration models for NBTI.
Keywords :
MOSFET; semiconductor device measurement; semiconductor device models; thermal stability; thermal stresses; 25 degC; PMOSFET; degradation mechanism; field/temperature acceleration models; negative bias temperature instability; post-stress NBTI recovery; stress temperature; stress time; stress voltage; temperature driven lock-in; voltage accelerated degradation; Acceleration; Degradation; Monitoring; Negative bias temperature instability; Niobium compounds; Stress measurement; Temperature distribution; Time measurement; Titanium compounds; Voltage;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269294
