Record efficiency and gain at 2.1 GHz of high power RF transistors for cellular and 3G base stations

Author

Brech, H. ; Brakensiek, W. ; Burdeaux, D. ; Burger, W. ; Dragon, C. ; Formicone, G. ; Pryor, B. ; Rice, D.

Author_Institution

Semicond. Products Sector, Motorola, Tempe, AZ, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

Improved RF performance of Motorola´s next generation HV6 high power RF-LDMOS transistor is demonstrated. In the 2.1 GHz band, with a two-carrier WCDMA signal, a 29% drain efficiency is achieved at -37 dBc IM3 and 20 W of output power, along with a high power gain of over 16.5 dB. To our knowledge, this is the highest combination of efficiency and linearity ever reported on a high power part of any technology or material system in that frequency band. A PAE of 62% at 100 W (P/sub 3dB/) is also achieved.

Keywords

3G mobile communication; UHF field effect transistors; cellular radio; power MOSFET; 100 W; 2.1 GHz; 20 W; 29 percent; 3G base stations; 62 percent; HV6 RF-LDMOS transistor; PAE; cellular base stations; drain efficiency; high power RF transistors; power gain; transistor linearity; two-carrier WCDMA signal; Base stations; Biological materials; Capacitance; Costs; Feedback; Linearity; Power amplifiers; Power system reliability; Power transistors; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269298

Filename

1269298