Title :
Highly manufacturable 40-50 GHz VCOs in a 120 nm system-on-chip SOI technology
Author :
Jonghae Kim ; Plouchart, J.-O. ; Zamdmer, N. ; Fong, N. ; Sherony, M. ; Yue Tan ; Talbi, M. ; Trzcinski, R. ; Safran, J. ; Kun Wu ; Womack, S. ; Sleight, J. ; Sheraw, C. ; Ray, A. ; Wagner, L.
Author_Institution :
Dev. Center, IBM Semicond. Res., Hopewell Junction, NY, USA
Abstract :
This paper presents the design optimization and experimental results of 40-50 GHz VCOs for embedded RF integrated circuits that are widely tunable and therefore highly manufacturable. We achieved up to 15% frequency tuning range from 43.5 to 50.5 GHz and -90.2 dBc/Hz phase noise performance at 1 MHz offset from 50.1 GHz operating frequency. The total power dissipation is 15 mW at 1.8 V. The VCOs are fabricated in a 120 nm SOI technology.
Keywords :
circuit tuning; millimetre wave oscillators; phase noise; silicon-on-insulator; system-on-chip; voltage-controlled oscillators; 1.8 V; 120 nm; 15 mW; 40 to 50 GHz; 43.5 to 50.5 GHz; 50.1 GHz; SOC; design optimization; embedded RF integrated circuits; frequency tuning range; manufacturable VCO; phase noise; system-on-chip SOI technology; tunable circuits; Circuit optimization; Design optimization; Integrated circuit manufacture; Integrated circuit technology; Pulp manufacturing; Radio frequency; Radiofrequency integrated circuits; System-on-a-chip; Tunable circuits and devices; Tuning;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269300
