GaN based high brightness LEDs and UV LEDs

Author

DenBaars, S.P. ; Katona, T. ; Cantu, P. ; Hanlon, A. ; Keller, S. ; Schmidt, M. ; Margalith, T. ; Pattisson, M. ; Moe, C. ; Speck, J. ; Nakamura, S.

Author_Institution

Dept. of Mater., California Univ., Santa Barbara, CA, USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

This talk summarizes the important materials and device results in gallium nitride based light emitter technology. GaN has emerged as the most promising material for high brightness LEDs with colors ranging from UV to blue, green, and white. Recent progress on ultra-violet (UV) emitting LEDs using AlGaN single quantum wells indicates wavelengths as short as 292 nm are achievable. UV LEDs are of great interest for solid state white lighting due to the high conversion efficiencies of typical phosphors in the UV spectrum. This paper focuses on recent progress in improving the properties of UV LEDs.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; lighting; quantum well devices; ultraviolet sources; wide band gap semiconductors; 292 nm; AlGaN; AlGaN single quantum wells; GaN based LED; LED colors; UV LED; blue LED; green LED; high brightness LED; phosphor conversion efficiency; solid state white lighting; ultra-violet wavelengths; white LED; Aluminum gallium nitride; Brightness; Displays; Gallium nitride; LED lamps; Light emitting diodes; MOCVD; Phosphors; Solid state lighting; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269304

Filename

1269304