Color filtering metallization for optoelectronic 100nm CMOS circuits

Author

Schmidt, D.J. ; Pianetta, P.A.

Author_Institution

Stanford Linear Accel. Center, Stanford Univ., USA

fYear

2003

fDate

8-10 Dec. 2003

Abstract

We show a novel color filter system that can be implemented in a standard CMOS process without any additional chemicals and processing, using standard CMOS metals like aluminum. The filter uses sub-wavelength aperture and grating arrays allowing some light wavelengths through while blocking others. Furthermore, we show an integrated photo-detector, both as a standard junction diode and an MSM diode which combines the filters and detector into the simplest color imaging system. The experimental data is explained with simulations and electromagnetic theory.

Keywords

CMOS image sensors; arrayed waveguide gratings; integrated circuit metallisation; integrated circuit modelling; integrated optoelectronics; metal-semiconductor-metal structures; optical filters; photodiodes; 100 nm; Al; MSM diode; color filter system; color filtering metallization; color imaging system; integrated photo-detector; junction diode; metal-semiconductor-metal detector; optoelectronic CMOS circuits; sub-wavelength aperture arrays; sub-wavelength grating arrays; Aluminum; Apertures; CMOS process; Chemical processes; Circuits; Color; Diodes; Filtering; Filters; Metallization;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International

Conference_Location

Washington, DC, USA

Print_ISBN

0-7803-7872-5

Type

conf

DOI

10.1109/IEDM.2003.1269305

Filename

1269305