DocumentCode :
2589523
Title :
Charging And Intrinsic-leakage Current Peaks In Thin Silicon-dioxide Films
Author :
Yamada, R. ; Yugami, J. ; Ohkura, M.
Author_Institution :
Central Research Laboratory, Hitachi, Ltd. Kokubunji, Tokyo 185, Japan
fYear :
1997
fDate :
10-12 June 1997
Firstpage :
147
Lastpage :
148
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1997. Digest of Technical Papers., 1997 Symposium on
Print_ISBN :
4-930813-75-1
Type :
conf
DOI :
10.1109/VLSIT.1997.623741
Filename :
623741
Link To Document :
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