• DocumentCode
    2589617
  • Title

    Study of Damage Mechanism of High Power Microwave on Electronic Equipments

  • Author

    Jinshi, Xiao ; Wenhua, Liu ; Shiying, Zhang ; Jinhua, Zhang ; Changfeng, Xing

  • Author_Institution
    Coll. of Electron. Eng., Naval Univ. of Eng., Wuhan
  • fYear
    2008
  • fDate
    10-12 Sept. 2008
  • Firstpage
    454
  • Lastpage
    457
  • Abstract
    Currently, damage effect of high power microwave (HPM) on electronic equipments is of increasing interest. HPM can disturb, damage, or destroy many military or civil electronic equipments. In this paper, the representative HPM waveform is investigated in time and frequency field respectively, and the main characteristics (peak power, rise time, power density, etc) are analyzed and listed. HPM generation devices and radiation are also discussed. Coupling energy into electronic devices via front door and back door, as a function of coupling coefficient and the effective area, is modeled. By presenting lots of kinds of coupling modes and paths, damage effects are divided into five different classes, and damage mechanism of HPM on electronic equipments is proven in the paper.
  • Keywords
    electronic equipment testing; radiation hardening (electronics); damage mechanism; electronic equipments; high power microwave; EMP radiation effects; Educational institutions; Electromagnetic interference; Electromagnetic radiation; Electronic equipment; Frequency; High power microwave generation; Microwave devices; Power engineering and energy; Space vector pulse width modulation; HPM; coupling mode; damage mechanism; electronic equipment;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 2008 China-Japan Joint
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-3821-1
  • Type

    conf

  • DOI
    10.1109/CJMW.2008.4772467
  • Filename
    4772467