DocumentCode
2589617
Title
Study of Damage Mechanism of High Power Microwave on Electronic Equipments
Author
Jinshi, Xiao ; Wenhua, Liu ; Shiying, Zhang ; Jinhua, Zhang ; Changfeng, Xing
Author_Institution
Coll. of Electron. Eng., Naval Univ. of Eng., Wuhan
fYear
2008
fDate
10-12 Sept. 2008
Firstpage
454
Lastpage
457
Abstract
Currently, damage effect of high power microwave (HPM) on electronic equipments is of increasing interest. HPM can disturb, damage, or destroy many military or civil electronic equipments. In this paper, the representative HPM waveform is investigated in time and frequency field respectively, and the main characteristics (peak power, rise time, power density, etc) are analyzed and listed. HPM generation devices and radiation are also discussed. Coupling energy into electronic devices via front door and back door, as a function of coupling coefficient and the effective area, is modeled. By presenting lots of kinds of coupling modes and paths, damage effects are divided into five different classes, and damage mechanism of HPM on electronic equipments is proven in the paper.
Keywords
electronic equipment testing; radiation hardening (electronics); damage mechanism; electronic equipments; high power microwave; EMP radiation effects; Educational institutions; Electromagnetic interference; Electromagnetic radiation; Electronic equipment; Frequency; High power microwave generation; Microwave devices; Power engineering and energy; Space vector pulse width modulation; HPM; coupling mode; damage mechanism; electronic equipment;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2008 China-Japan Joint
Conference_Location
Shanghai
Print_ISBN
978-1-4244-3821-1
Type
conf
DOI
10.1109/CJMW.2008.4772467
Filename
4772467
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