Title :
Epitaxial strained germanium p-MOSFETs with HfO/sub 2/ gate dielectric and TaN gate electrode
Author :
Ritenour, A. ; Yu, S. ; Lee, M.L. ; Lu, N. ; Bai, W. ; Pitera, A. ; Fitzgerald, E.A. ; Kwong, D.L. ; Antoniadis, D.A.
Author_Institution :
Microsystems Technol. Lab., MIT, Cambridge, MA, USA
Abstract :
Germanium p-MOSFETs with a thin high-k dielectric (EOT/spl sim/1.6 nm) were fabricated on bulk Ge and epitaxial germanium-on-silicon substrates. These devices exhibited sub-90 mV/decade subthreshold swing and low gate leakage. The IV and CV characteristics achieved in this work allow for accurate extraction of important device parameters such as transconductance (Gm) and low-field mobility. Results from n-MOSFETs fabricated on bulk Ge substrates are also presented.
Keywords :
MOSFET; dielectric thin films; elemental semiconductors; germanium; hafnium compounds; hole mobility; leakage currents; semiconductor epitaxial layers; tantalum compounds; 1.6 nm; EOT; Ge-HfO/sub 2/-TaN; HfO/sub 2/ gate dielectric; TaN gate electrode; bulk Ge substrate; epitaxial germanium-on-silicon substrate; epitaxial strained germanium p-MOSFET; gate leakage; hole mobility; low-field mobility; subthreshold swing; thin high-k dielectric; transconductance; Capacitive sensors; Dielectric substrates; Electrodes; Fabrication; Gate leakage; Germanium; Hafnium oxide; MOSFET circuits; Silicon; Sputter etching;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269315
