DocumentCode :
2589746
Title :
Ultra Low Noise Dielectric Resonators Oscillators with Tuning at Ku Band
Author :
Zhou, Liang ; Wu, Zhuo ; Chu, Rui ; Mao, Jun-Fa
Author_Institution :
Sch. of Electron. Inf. & Electr. Eng., Shanghai Jiao Tong Univ., Shanghai
fYear :
2008
fDate :
10-12 Sept. 2008
Firstpage :
474
Lastpage :
477
Abstract :
This paper describes the design of very low noise, tunable, Ku band Dielectric Resonator Oscillators (DROs) presenting phase noise performance of -100 dBc/Hz at 1 kHz offset and -130 dBc/Hz at 10 kHz offset. SiGe based transistors are used for the oscillator sustaining amplifiers which offer circulating power 10 dBm and gain of 4 dB per stage as well as low flicker noise corner between 10 kHz and 40 kHz. The resonator has unloaded Q around 15,000 at operating frequency and is then optimized and coupled to the amplifiers for minimum phase noise where QL/Q0=1/2 hence S21=-6 dB. In order to incorporate tuning, phase shifter is also investigated. The phase noise measurement system is presented using two DROs beating at the same frequency.
Keywords :
Ge-Si alloys; circuit tuning; dielectric resonator oscillators; flicker noise; microwave amplifiers; microwave oscillators; phase shifters; Ku band DRO; SiGe; amplifier; flicker noise; frequency 1 kHz; frequency 10 kHz to 40 kHz; phase noise measurement system; phase shifter; silicon-germanium based transistors; ultra low noise dielectric resonator oscillator; 1f noise; Dielectrics; Frequency; Gain; Germanium silicon alloys; Low-noise amplifiers; Oscillators; Phase noise; Silicon germanium; Tuning;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Conference, 2008 China-Japan Joint
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-3821-1
Type :
conf
DOI :
10.1109/CJMW.2008.4772472
Filename :
4772472
Link To Document :
بازگشت