Characteristics of "Second Breakdown" and Transistor Failure

Author

Schafft, H.A. ; French, J.C.

Author_Institution

National Bureau of Standards, Washington 25, D.C.

fYear

1962

fDate

Sept. 1962

Firstpage

104

Lastpage

107

Keywords

Breakdown voltage; Circuits; Conductivity; Delay effects; Electric breakdown; Geometry; Germanium alloys; Low voltage; Oscilloscopes; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Failure in Electronics, 1962. First Annual Symposium on the

Conference_Location

Chicago, IL, USA

ISSN

0097-2088

Type

DOI

10.1109/IRPS.1962.359988

Filename

4201994

Link To Document