Title :
Characteristics of "Second Breakdown" and Transistor Failure
Author :
Schafft, H.A. ; French, J.C.
Author_Institution :
National Bureau of Standards, Washington 25, D.C.
Keywords :
Breakdown voltage; Circuits; Conductivity; Delay effects; Electric breakdown; Geometry; Germanium alloys; Low voltage; Oscilloscopes; Resistors;
Conference_Titel :
Physics of Failure in Electronics, 1962. First Annual Symposium on the
Conference_Location :
Chicago, IL, USA
DOI :
10.1109/IRPS.1962.359988
