Title :
Fluorine implantation impact in extension region on the electrical performance of sub-50nm P-MOSFETs
Author :
Fukutome, H. ; Momiyama, Y. ; Nakao, H. ; Aoyama, T. ; Arimoto, H.
Author_Institution :
Fujitsu Labs. Ltd., Tokyo, Japan
Abstract :
We conclude that fluorine implantation in the extension region (F-tub) makes the Vth roll-off characteristic dramatically improve without degrading the drive current. Using scanning tunneling microscopy (STM) for two-dimensional (2D) carrier profiling, we directly confirmed that such an improvement of the device performance was induced by the reduction of the overlap length and the steep lateral abruptness on the nanometer scale.
Keywords :
MOSFET; doping profiles; fluorine; scanning tunnelling microscopy; 2D carrier profiling; 50 nm; F; F-tub region; P-MOSFET extension region; STM; drive current; fluorine implantation; overlap length reduction; scanning tunneling microscopy; steep lateral abruptness; Boron; Degradation; Impurities; Laboratories; MOSFET circuits; Microscopy; Nanoscale devices; Transistors; Tunneling; Two dimensional displays;
Conference_Titel :
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location :
Washington, DC, USA
Print_ISBN :
0-7803-7872-5
DOI :
10.1109/IEDM.2003.1269327
