DocumentCode
2589918
Title
Fluorine implantation impact in extension region on the electrical performance of sub-50nm P-MOSFETs
Author
Fukutome, H. ; Momiyama, Y. ; Nakao, H. ; Aoyama, T. ; Arimoto, H.
Author_Institution
Fujitsu Labs. Ltd., Tokyo, Japan
fYear
2003
fDate
8-10 Dec. 2003
Abstract
We conclude that fluorine implantation in the extension region (F-tub) makes the Vth roll-off characteristic dramatically improve without degrading the drive current. Using scanning tunneling microscopy (STM) for two-dimensional (2D) carrier profiling, we directly confirmed that such an improvement of the device performance was induced by the reduction of the overlap length and the steep lateral abruptness on the nanometer scale.
Keywords
MOSFET; doping profiles; fluorine; scanning tunnelling microscopy; 2D carrier profiling; 50 nm; F; F-tub region; P-MOSFET extension region; STM; drive current; fluorine implantation; overlap length reduction; scanning tunneling microscopy; steep lateral abruptness; Boron; Degradation; Impurities; Laboratories; MOSFET circuits; Microscopy; Nanoscale devices; Transistors; Tunneling; Two dimensional displays;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 2003. IEDM '03 Technical Digest. IEEE International
Conference_Location
Washington, DC, USA
Print_ISBN
0-7803-7872-5
Type
conf
DOI
10.1109/IEDM.2003.1269327
Filename
1269327
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