CVD-cobalt for the next generation of source/drain salicidation and contact silicidation in novel MOS device structures with complex shape

A novel CVD-cobalt process which enables a uniform salicidation even in novel MOS device structures with complex shape is developed for the first time. With CVD-cobalt salicidation, identical values of low sheet resistance can be realized on actives and gates regardless of the surrounding geometry, due to its excellent conformality. In addition, a low contact resistance can be obtained in small metal/active contacts even with high post thermal budget when CVD-Co is applied as an ohmic layer due to its conformality and inertness with the dopants. CVD-cobalt is a needed and suitable solution for the salicidation and silicidation of not only the continuously scaling conventional CMOS, but also the emerging next generation of devices with complex shapes and structures such as vertical and 3D FET.